[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-7] Effect of B-doping on Photoluminescence Properties of Si-QDs with Ge Core

〇Ryo Nagai¹, Shuntaro Fujimori¹, Takuya Maehara¹, Mitsuhisa Ikeda¹, Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

Keywords:SiQDs