[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-W934-7] Domain Divided Device Simulation with Flexible Boundary Conditions

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Takahisa Tanaka^1,2, Ken Uchida^1,2 (1.TRDEC, Keio Univ., 2.Elec.Eng. Keio Univ.)

Keywords:device simulation, domain division, boundary condition

Simulation of a device is divided into several regions. Physical values at each grid on a surface of a neighboring region are used for boundary conditions of the conducting region. Each region is sequentially simulated as the boundary conditions are changed from Neumann to Dirichlet boundary conditions. The present approach makes the device simulation for large structures with one core on MPU.