The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 10, 2019 1:30 PM - 4:45 PM W934 (W934)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.)

3:00 PM - 3:15 PM

[10p-W934-6] NEGF Simulation of Inter-layer Tunneling under Finite Bias

〇(M1)Takaya Mishima1, Hajime Tanaka1, Futo Hashimoto1, Nobuya Mori1 (1.Osaka Univ.)

Keywords:interlayer tunneling process, 2DTFET, simulation