[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-11] Surface Structure Chemical Transfer Method to Fabricate Fixed Abrasive Multi-Si with Low Reflectance and Low Interface State Density

〇(D)Shogo Kunieda^1,2, Kentaro Imamura^1,2, Hikaru Kobayashi^1,2 (1.ISIR Osaka Univ., 2.CREST-JST)

Keywords:semiconductor, interface state density

For slicing Si wafers, the fixed abrasive machining method is more economical than the conventional free abrasive method. However, fixed abrasive multi-Si wafers have shallower damage layer formed during slicing, and low reflectance surfaces cannot be formed with conventional acidic etching which proceeds from the saw damages. In this work, we have developed a method of fabrication of low reflectance multi-Si wafers by use of the surface structure chemical transfer (SSCT) method to fabricate a nanocrystalline Si (nc-Si) layer. The nc-Si layer was etched by a KOH solution to create low reflectance textured surfaces followed by deposition of a silicon nitride (SiN) layer for the surface passivation. Using this method, both low reflectance and high carrier lifetime were achieved. The high carrier lifetime is attributable to the low interface state density evaluated by conductance frequency measurements.