[10a-W934-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10a-W934-9] [Young Scientist Presentation Award Speech] Fundamental Properties of Graphene-Assisted Chemical Etching of Semiconductor Surface

〇Tomoki Hirano¹, Yuki Nakata¹, Hiroto Yamashita¹, Shaoxian Li¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

Keywords:etching, reduced graphene oxide, semiconductor surface

We have discovered graphene-assisted chemical etching, which is selective etching of semiconductor surfaces in contact with single sheets of reduced graphene oxide (rGO) in a solution. In this presentation, we will show the fundamental properties of this etching mode, which is applied to Ge surfaces in O₂-containing water. Furthermore, we report the relationship between the doping sites of nitrogen atoms in a graphene network and the etching rate of Ge under such a graphene sheet.