[11a-PB3-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11a-PB3-2] Transient Analysis by using TCAD on Super-Steep SS “PN-Body-Tied SOI-FET”

〇Takayuki Mori¹, Jiro Ida¹, Hiroki Endo¹ (1.Kanazawa Inst. of Tech.)

Keywords:floating body effect, SOI MOSFET, steep subthreshold slope