[11a-PB3-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11a-PB3-4] Evaluation of Seebeck Coefficient of P-type lanar Si-nanowire: Dopant Concentration Dependency and Forming-gas Annealing Effect

〇(B)Sakika Tanabe¹, Takashi Matsukawa², Takeo Matsuki², Takanobu Watanabe¹, Yuya Himeda¹, Hiroki Takezawa¹, Kohei Mesaki¹, Shuhei Hirao¹ (1.Waseda Univ., 2.AIST)

Keywords:Thermoelectric Generator