9:30 AM - 11:30 AM
[11a-PB4-2] I-V Property of Simple P-N Junction GaN Fabricated on Graphite Substrate
Keywords:GaN, Graphite, P-N Junction
We are developing GaN growth technique to fabricate light-emitting device on graphite substrate such as isotropic graphite and graphite sheet PERMA-FOIL®. In the present study, we measured I-V property of simple P-N junction GaN device, and obtained diode property. However, the property was not comparable to the device on sapphire.