9:30 AM - 11:30 AM
[11a-PB4-3] Study of surface contamination on single-crystalline GaN layer (Ⅱ)
Keywords:GaN layer, XPS, surface contamination
In our report, we have demonstrated the air exposed GaN surface is contaminated by Si-based compounds. In this work, we confirmed to remove Si-based compounds from the surface by chemical etching. Also, we examined the contamination rate using X-ray photoelectron spectroscopy (XPS).