[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-1] First-principles Study for Oxide Semiconductors with Corundum Structures

〇Kazuyuki Uno¹, Taiki Nakamura¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

Keywords:oxide semiconductors, first principles study

First principles study was carried out for oxide semiconductors, such as alpha-Ga2O3 and alpha-Ir2O3, with corundum structures. The calculated results for alpha Ga2O3 were similar to those previously reported by He et al. The results for alpha Ir2O3 were : the lattice constants were a=5.235AA and 13.88AA and conduction and valence bands were constructed by d-electrons of Ir, etc.