[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-3] Purification of β-Ga₂O₃ Crystals by the Zone-Refining Method

〇Toshimitsu Ito¹, Yasuko Ozaki¹, Yasuhide Tomioka¹, Hideki Inaba¹, Hideyuki Watanabe¹ (1.AIST)

Keywords:beta-Ga2O3, zone refining method, purification

The distribution coefficient of Si in β-Ga₂O₃ has been estimated, which confirms that the zone-refining method is effective. By this method, high level of purification would be possible. We have simulated distribution of Si in a grown β-Ga₂O₃ crystal.