The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 9:00 AM - 11:30 AM S011 (South Lecture Bldg.)

Kentaro Kaneko(Kyoto Univ.)

10:30 AM - 10:45 AM

[11a-S011-6] Local structure of Sn dopant β Ga oxide

Kazushi Miki1, N. Happo2, K. Kimura3, K. Sasaki4, Y. Tang1, K. Nawata1, H. Kitafuji1, S. Kitamura1, H. Ozaki3, K. Hisatsune2, R. Hisatsune2, H. Tajiri5, S. Yamakoshi6, K. Hayashi3, A. Kuramata4 (1.Univ. Hyogo, 2.Hiroshima City Univ., 3.NITech, 4.Novel Crystal Tech., 5.JASRI, 6.Tamura Corp.)

Keywords:wide gap oxide semiconductor, dopant, local structure

We suceeded in measurement of Sn Fulorescence X-ray Hologram from Sn: /beta Ga oxide. We discuss the local structure of Sn dopant.