The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[11a-S223-1~10] 13.8 Optical properties and light-emitting devices

Mon. Mar 11, 2019 9:30 AM - 12:15 PM S223 (S223)

Kenji Shinozaki(AIST)

11:30 AM - 11:45 AM

[11a-S223-8] Enhancement of anti-Stokes photoluminescence in (Y:Yb)AG at high temperature

〇(M2)Yuta Nakayama1, Tatsuhito Ando2, Kota Terada1, Yukihiro Harada1, Takashi Kita1 (1.Kobe University, 2.Panasonic)

Keywords:Rare-earth doped oxide, laser cooling, multi-phonon absorption

Laser cooling in solids using anti-Stokes photoluminescence (ASPL) through a multi-phonon absorption has been expected for the cooling without a heat generation. The previous researchers have focused on the cooling from room temperature (RT) to cryogenic temperature. A multi-phonon absorption probability increases when a material temperature increases. Therefore, a strong ASPL at a high temperature above RT is predicted. To obtain the temperature dependence of ASPL above RT, we measured the PL spectra of Yb-doped yttrium aluminum garnet at 297 ~ 450 K. The result showed an enhancement of ASPL and the cooling performance at high temperature.