The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11a-S422-1~10] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 9:30 AM - 12:15 PM S422 (S422)

Kwoen Jinkwan(The Univ. of Tokyo), Keisuke YAMANE(Toyohashi Inst. of Tech.)

11:15 AM - 11:30 AM

[11a-S422-7] PL polarization degree of GaAs Bi / GaAs multiple quantum well by Bi-irradiation alone

Takumi Yamamoto1, Toui Higuti1, Homare Kanbara1, Satoshi Shimomura1 (1.Ehime Univrsity)

Keywords:Polarization characteristics, GaAsBi