Evaluation of Electrical Characteristics of GaAsN Films with Intentional Change of N Distribution

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 11, 2019 9:30 AM - 12:15 PM S422 (S422)

Kwoen Jinkwan(The Univ. of Tokyo), Keisuke YAMANE(Toyohashi Inst. of Tech.)

11:00 AM - 11:15 AM

〇(D)Masahiro Kawano¹, Daiki Ueda¹, Ryo Minematsu¹, Tomohiro Haraguchi¹, Hidetoshi Suzuki¹ (1.Miyazaki Univ.)

Keywords:GaAsN, Atomic layer epitaxy