[11a-W641-1~10] 6.3 Oxide electronics

△ [11a-W641-10] Investigation of InGaZnO Transistors with Solid-State Electric Double Layer as a Gate

〇Yoshitaka Watanabe¹, Asano Tetsuya¹, Fujii Mami¹, Juan Paolo Bermundo¹, Ishikawa Yasuaki¹, Uraoka Yukiharu¹, Adachi Hedeaki¹ (1.NAIST)

Keywords:Electric Double Layer Transistor, Solid State Electrolyte