The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[11a-W934-1~11] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Mon. Mar 11, 2019 9:00 AM - 11:45 AM W934 (W934)

Hiromu Ishii(Toyohashi Univ. of Tech.), Minoru Sasaki(Toyota Tech. Inst.)

10:15 AM - 10:30 AM

[11a-W934-6] Grating for Wavelength Selective Infrared Emitter Using Surface Plasmon Polariton

Shuga Yahagi1, Shinya Kumagai2, Katsuya Masuno3, Makoto Ishii3, 〇Minoru Sasaki1 (1.Toyota Technol. Inst., 2.Meijyo Univ., 3.Yazaki Corp.)

Keywords:Wavelength Selective Infrared Emitter, Surface Plasmon Polariton, Grating Shape Accuracy

We have proposed the indirect plasmonic infrared emitter using the grating for exciting the surface plasmon polariton being near to the thermal source. The emission wavelength is selected keeping the other wavelength inside the cavity. Up to now, the emission peak is shifted from the aiming wavelength for CO2 gas sensing. For removing this problem, the numerical analysis makes the fact clear that the line-and-space ratio and the grating depth give the significant effect to define the emission wavelength as well as the grating pitch. The new design allows the size deviation of +/-0.1micro-meter for obtaining the emission band being matched with the CO2 gas absorption. During the fabrication, the above sizes are evaluated to tune the grating shape. As the result, the obtained emission spectrum shows the CO2 gas absorption near to the center of the emission peak.