The 66th JSAP Spring Meeting, 2019

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10 Spintronics and Magnetics » 10.2 Fundamental and exploratory device technologies for spin

[11p-M101-8~14] 10.2 Fundamental and exploratory device technologies for spin

Mon. Mar 11, 2019 3:15 PM - 5:00 PM M101 (H101)

Shigemi Mizukami(Tohoku Univ.)

4:00 PM - 4:15 PM

▲ [11p-M101-11] Magnetization compensation temperature and field-driven domain wall creep motion in ferrimagnetic Tb/CoFeB/MgO layer

〇Yoichi Shiota1, Yushou Hirata1, Takaya Okuno1, Duck-Ho Kim1, Takahiro Moriyama1, Teruo Ono1 (1.ICR Kyoto Univ.)

Keywords:Ferrimagnet, Magnetization compensation temperature, Magnetic domain wall

We studied the magnetization compensation temperature (TM) and field-driven domain wall creep motion with respect to CoFeB thickness in Tb/CoFeB/MgO layer. Antiferromagnetic coupling between the magnetic moment of Tb and CoFeB leads to a ferrimagnetic behavior in CoFeB/MgO junctions. We found that TM was increased by decreasing the thickness of CoFeB, which can be explained by the ratio of total magnetic moment of Tb and CoFeB. Field-driven magnetic domain wall (DW) dynamics in a creep region were then investigated using a real-time DW detection method. The faster DW velocity was obtained in thicker CoFeB, which is in contrast to the previously reported results in the ferromagnetic wires.