Enhancement of CPP-GMR ratio by Ag-In-Zn-O precursor for spacer layer

Tomoya Nakatani; Taisuke Sasaki; Yuya Sakuraba; Kazuhiro Hono

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[11p-M101-15~21] 10.3 Spin devices, magnetic memories and storages

Mon. Mar 11, 2019 5:15 PM - 7:00 PM M101 (H101)

Kouta Kondou(RIKEN)

6:15 PM - 6:30 PM

▲ [11p-M101-19] Enhancement of CPP-GMR ratio by Ag-In-Zn-O precursor for spacer layer

〇Tomoya Nakatani¹, Taisuke Sasaki¹, Yuya Sakuraba¹, Kazuhiro Hono¹ (1.NIMS)

Keywords:GMR, Heusler alloy

We report large CPP-GMR ratios by using a new Ag-In-Zn-O material as a precursor of the spacer layer. In the CPP-GMR stack, the Ag-In-Zn-O precursor layer turned to a Ag-In:Mn-Zn-O nanocomposite structure. We obtained CPP-GMR up to 54%, which is thought to be due to the current-confinment effect through the Ag-In paths.