[11p-M101-1~7] CS.9 Code-sharing Session of 10.1, 10.2, 10.3 & 10.4

[11p-M101-4] Write Endurance test with 64-bit Spin Current Type Magnetic Memory Array

〇Yugo Ishitani¹, Yohei Shiokawa¹, Eiji Komura¹, Atsushi Tsumita¹, Keita Suda¹, Yuji Kakinuma¹, Tomoyuki Sasaki¹ (1.TDK Co., Ltd.)

Keywords:spintronics, spin orbit torque, Magnetic Tunnel junction

Recently, while reducing power consumption of IoT / AI devices to be used at the edge limited in power supply is an issue, nonvolatile memories to replace volatile SRAM last level cache in which standby power is generated are required. A spin current type magnetic memory using a spin orbit torque (SOT) is one of candidates for nonvolatile memories substituting for SRAM from its high speed operation. In this presentation, we report the results of write endurance test of spin current type magnetic memory array of 64-MTJ (Magnetic Tunnel junction) element.