[11p-M103-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[11p-M103-4] Well width dependence of spin relaxation time at low temperature in GaAs/Al_0.3Ga_0.7As quantum well

〇Yuki Matsuda¹, Yuichi Nakamura¹, Qiming Sun¹, Daigo Tashiro¹, Takahito Yamauchi¹, Satoshi Shimomura², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Ehime Univ.)

Keywords:spin relaxation, GaAs/AlGaAs quantum well, pump and probe reflection measurement

In this study, we measured the spin relaxation time of GaAs / AlGaAs single quantum well with different well widths by time-resolved spin-dependent pump and probe reflection measurement, and investigated the dependence of the spin relaxation time on the well width at low temperature. As a result, we observed the negative well width dependence of the spin relaxation time between the well width of 1.8 nm and 2.6 nm. Since this is different from the well width dependence expected from the EY effect, which is a spin relaxation mechanism at low temperature, it is thought that it can contribute to elucidation of the spin relaxation mechanism in the low temperature range.