[11p-M103-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[11p-M103-5] Device fabrication and the evaluation for stress-tuning of hole g factor in single quantum dots

〇Taro Ishida¹, Ryousuke Matsusaki¹, Reina Kaji¹, Satoru Odashima², Hideo Kaiju³, Junji Nishii³, Satoru Adachi¹ (1.Hokkaido Univ., 2.CRIS, Hokkaido Univ., 3.RIES, Hokkaido Univ.)

Keywords:semiconductor, quantum dots, stress tuning device

For the purpose of hole g factor control in single quantum dots (QDs) by utilizing the external strain, we designed and fabricated an external stress applying structure based on a piezoelectric material. Nano-pillar (φ ~ 600 nm, l ~ 2.5 μm) containing QD layer were bonded with thermocompression on the Au electrode deposited on the piezoelectric material. Thereafter, HSQ (thickness: 840 nm) was spin coated in order to promote the strain propagation from the side surface of nano-pillars. In order to evaluate the efficiency of strain propagation to the QD layer, the shift of the QD emission energy was measured. We observed sharp PL peaks originated from single QD and an energy shift of about 1.7 meV under the application of the external strain up to ~ 0.06%.