[11p-M103-1~10] 13.6 ナノ構造・量子現象・ナノ量子デバイス

▲ [11p-M103-8] Effect of tunnel resistance modulation on single-electron tunneling in selectively-doped Si nano-transistors

〇Adnan Afiff^1,2,3、Arief Udhiarto³、Harry Sudibyo³、Djoko Hartanto³、Michiharu Tabe¹、Daniel Moraru¹ (1.RIE, Shizuoka Univ.、2.GSST, Shizuoka Univ.、3.Univ. of Indonesia)

キーワード：dopant quantum dot