Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes

Gaurang Prabhudesai; Muruganathan Manoharan; Masahiro Hori; Yukinori Ono; Hiroshi Mizuta; Michiharu Tabe; Daniel Moraru

講演情報

一般セッション(口頭講演)

13 半導体 » 13.6 ナノ構造・量子現象・ナノ量子デバイス

[11p-M103-1~10] 13.6 ナノ構造・量子現象・ナノ量子デバイス

2019年3月11日(月) 13:15 〜 16:00 M103 (H103)

中岡俊裕(上智大)、眞田治樹(ＮＴＴ)

15:30 〜 15:45

▲ [11p-M103-9] Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes

〇Gaurang Prabhudesai^1,2、Muruganathan Manoharan³、Masahiro Hori¹、Yukinori Ono¹、Hiroshi Mizuta³、Michiharu Tabe¹、Daniel Moraru¹ (1.RIE, Shizuoka Univ.、2.GSST, Shizuoka Univ.、3.JAIST)

キーワード：nanoscale Esaki diodes, pn junction, dopant-induced quantum-dots