[11p-M103-1~10] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

▲ [11p-M103-9] Effect of dimensionality on the formation of dopant-induced quantum-dots in heavily doped Si Esaki diodes

〇Gaurang Prabhudesai^1,2, Muruganathan Manoharan³, Masahiro Hori¹, Yukinori Ono¹, Hiroshi Mizuta³, Michiharu Tabe¹, Daniel Moraru¹ (1.RIE, Shizuoka Univ., 2.GSST, Shizuoka Univ., 3.JAIST)

Keywords:nanoscale Esaki diodes, pn junction, dopant-induced quantum-dots