[11p-M113-1~20] 6.2 Carbon-based thin films

△ [11p-M113-4] High frequency performance evaluation of (111) diamond MOSFETs for complementary RF power amplifiers application

〇(B)Ken Kudara¹, Shoichiro Imanishi¹, Nobutaka Oi¹, Satoshi Okubo¹, Kiyotaka Horikawa¹, Taisuke Kageura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ., 2.Waseda Zaiken)

Keywords:Radio frequency Field Effect Transistor, Complementary RF power amplifiers, Diamond

2DHG diamond is expected to be applied as a high-frequency and high-power p-FET. Complementary FETs are optimal for class-D high power radio frequency amplifiers, and diamond p-FET is the only p-FET which constructs a complementary circuit for GaN n-FET. GaN n-FET can be formed on (111) diamond substrate by heteroepitaxial growth. If a p-FET with similar performance could be fabricated on the same substrate, a monolithic complimentary high frequency amplifier can be realized. In this work, we fabricated 2DHG diamond MOSFETs with high quality Al₂O₃ layers acting as gate insulator on (111) diamond substrate and evaluated radio frequency characteristics at high voltage operation (|V_DS| ≥ 30 V).