The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[11p-M113-1~20] 6.2 Carbon-based thin films

Mon. Mar 11, 2019 1:15 PM - 7:00 PM M113 (H113)

Kazuhiro Oyama(DENSO), Shinobu Onoda(QST), Fujii Satoshi(N.I.T, Okinawa coll.)

2:00 PM - 2:15 PM

[11p-M113-3] Vertical-type 2DHG Diamond MOSFET ; Achievement of High Drain Current Operation (~1 A) by Gate Width 10 mm

〇(B)Jun Nishimura1, Nobutaka Oi1, Masayuki Iwataki1, Ikuto Tsuyuzaki1, Satoshi Okubo1, Taisuke Kageura1, Atsushi Hiraiwa1,2, Hiroshi Kawarada1,3 (1.Waseda Univ., 2.Nagoya Univ., 3.Waseda ZAIKEN.)

Keywords:diamond, vertical-type MOSFET, device

We fabricated vertical-type 2 dimensional hole gas (2DHG) diamond MOSFETs with the gate width up to 10 mm, which have multiple trenches in one device. As a result, it was able to achieve the high current operation with maximum drain current of 0.96 A (@VDS:-25 V, VGS:-20 V). From the structure of this study, it was confirmed for high current operation for the vertical-type 2DHG diamond MOSFETs. So, it were expected the realization of vertical-type high power MOSFETs for power device applications.