1:15 PM - 1:30 PM
[11p-M136-1] Consideration on Temperature Dependence of De-trapping of Localized Carriers
Keywords:de-trap, small polaron, trap-assisted tunneling
Regarding the traps in the film such as SiN used for the charge storage layer of the nonvolatile memory, we often find a large gap between researchers' viewpoints, if we look at reports discussing the trapping or de-trapping rate of localized carriers. In this report, we focus on the de-trapping process, which is easy to discuss, and compare the following three methods on the physical modeling:
(1) Method of modeling by the thermal excitation alone;
(2) Method to incorporate the Poole-Frenkel effect into (1);
(3) Method to consider both the thermal excitation (the phonon transition as more accurately) and the tunneling effect.
Furthermore, we discuss how the method of (3) is physically reasonable compared to the methods of (1) and (2).
(1) Method of modeling by the thermal excitation alone;
(2) Method to incorporate the Poole-Frenkel effect into (1);
(3) Method to consider both the thermal excitation (the phonon transition as more accurately) and the tunneling effect.
Furthermore, we discuss how the method of (3) is physically reasonable compared to the methods of (1) and (2).