[11p-M136-1~14] 13.3 絶縁膜技術

[11p-M136-3] Charge trapping characteristics in SiO₂ during application of electric stress at high temperature

〇(M2)Takeshi Nanke¹、Ryu Hasunuma¹ (1.Univ. of Tuskuba)

キーワード：trap, interface state