Theoretical study on Si missing in Si pillar oxidation II

Hiroyuki Kageshima; Kenji Shiraishi; Tetsuo Endoh

Presentation information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[11p-M136-1~14] 13.3 Insulator technology

Mon. Mar 11, 2019 1:15 PM - 5:15 PM M136 (H136)

Takanobu Watanabe(Waseda Univ.), Koji Kita(Univ. of Tokyo), Kiyoteru Kobayashi(Tokai Univ.)

2:00 PM - 2:15 PM

[11p-M136-4] Theoretical study on Si missing in Si pillar oxidation II

〇Hiroyuki Kageshima^1,4, Kenji Shiraishi^2,4, Tetsuo Endoh^3,4 (1.Shimane Univ., 2.Nagoya Univ., 3.Tohoku Univ., 4.JST ACCEL)

Keywords:Si oxidation, nanopillar, theory

We reported the oxide viscous flow mechanism is the most promising between the four considerable candidates for the Si missing phenomena during the thermal oxidation of thin Si pillars in the last meeting. This time, we will report the reasons why the other three are not suitable enough to explain the Si missing.