[11p-PA4-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-PA4-11] Influence of In segregation on InAs QDs growth in DWELL

〇Naoki Okada¹, Daigo Ikuno¹, Tao Wang¹, Shunsuke Ohkouchi², Nobuhiko Ozaki¹ (1.Wakayama Univ., 2.NEC corp.)

Keywords:epitaxial growth, iii-v semiconductor, molecular beam epitaxy