[11p-PA4-1~13] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[11p-PA4-6] Photon up-conversion in submonolayer InAs structures

〇Hiroto Mizuno¹, Yuwei Zhang¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

Keywords:Submonolayer, Up-conversion, Intermediate band solar cells

InAs / GaAs submonolayer (SML) structures is attracting interest for preparing active layers of intermediate band solar cells. However, up-conversion process itself has not yet been understood. In this study, the carrier dynamics and influence of InAs distribution in the SML structures on the up-conversion process are studied by photoluminescence (PL) and up-converted PL (UPL) measurements. We find that the spatial distribution of the InAs due to diffusion has a strong influence in the UPL efficiency.