[11p-PB3-1~27] 13.7 化合物及びパワー電子デバイス・プロセス技術

▼ [11p-PB3-1] Trapping reduction of SiO₂/GaN MOS structure by high pressure water vapor annealing

〇(DC)LIN TENGDA¹、Mutsunori Uenuma¹、Yasuaki Ishikawa¹、Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology)

キーワード：GaN-SiO2 MOS, reliability, post annealing

High pressure water vapor annealing (HPWVA) is applyed and aimed to improve the reliability of GaN/SiO2 MOS structure. Through the constant current stressed time dependent dielectric breakdown (TDDB) measurements and a kinetic theoretical analysis, HPWVA sample exhibit longer lifetime and smaller electron trapping behavior.