LIN TENGDA

→ Search for LIN TENGDA in Google Scholar

Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

▼ [11p-PB3-1] Trapping reduction of SiO₂/GaN MOS structure by high pressure water vapor annealing

〇(DC)LIN TENGDA¹, Mutsunori Uenuma¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology)