[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-10] Characteristics of AlGaN/GaN high electron mobility transisors with various p-type GaN gate structures fomed by dry etching

〇Takaaki Kondou¹, Yoshihiko Akazawa¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

Keywords:GaN, AlGaN/GaN HEMT, Dry etching

The effect of selective dry etching for p-type GaN gate formation on characteristics of AlGaN / GaN HEMT was reported in previous study. In this report, HEMTs with various p-type GaN gate structures were fabricated and the relationships between structures and characteristics was investigated. Three HEMT samples were fabricated for Sample A: removed p-type GaN, Sample B: AlGaN overetched, and Sample C: p-type GaN remained. Electron mobilities for Sample A and B were 1600 cm²/V·s and 1100 cm²/V·s, respectively. Scarcely any difference was observed in photoluminescence spectra for Sample A and B.