Takaaki Kondou

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

[11p-PB3-10] Characteristics of AlGaN/GaN high electron mobility transisors with various p-type GaN gate structures fomed by dry etching

〇Takaaki Kondou¹, Yoshihiko Akazawa¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)