[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-17] Characterization of shallow levels in p-GaN grown by MOVPE on GaN

〇(B)Hikaru Yoshida¹, Tatsuya Kogiso¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:p-GaN

We studied shallow levels in MOVPE p-GaN by admittance spectroscopy which is more suitable to characterize shallow levels than DLTS. The activation annealing at 850 ℃was performed for 5 min and 5 h to study the effect of activation annealing time on p-GaN. The ion ionization energy of Mg was estimated to be 0.21 eV for both samples. The traps labeled C (E_v+0.21 eV) and D (E_v+0.11 eV) was observed in 5-h p-GaN, indicating the production of defects by prolonged activation annealing.