[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-22] Turn-On Capacitance Recovery Characteristics of AlGaN/GaN/GaN:C Hetero-Structures Grown on 3C-SiC/Si Substrates

〇Yoshitaka Nakano¹, Koichi Kitahara², Sumito Ouchi², Mitsuhisa Narukawa², Keisuke Kawamura² (1.Chubu Univ., 2.Air Water Inc.)

Keywords:AlGaN/GaN hetero-structures, 3C-SiC/Si substrates, turn-on capacitance recovery characteristics

We have investigated turn-on capacitance recovery characteristics in AlGaN/uid-GaN/GaN:C hetero-structures grown on 3C-SiC/Si substrates, compared to those on Si substrates, in view of bulk-related current collapse phenomena. The hetero-strucures on 3C-SiC/Si substrates are found to speed up the turn-on capacitance recovery and to have its thermal stablility, compared to those on Si substrates.