[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-25] Fabrication of GaAs/Diamond direct bonding for high power device applications

〇Yuji Nakamura¹, Satoshi Masuya², Makoto Kasu², Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ., 2.Saga Univ.)

Keywords:diamond, semiconductor