Keywords:GaAs, heterostructure diode, superjunction
We previously reported current modulation characteristics of AlGaAs/GaAs/AlGaAs HSJ (heterostructure superjunction) transistor with a pair of electron and hole channels. For high breakdown voltage, it is necessary to match an acceptor concentration with a donner concentration to form channels. In this study, the C acceptor concentration was designed to be 0.7×1012 cm-2 considering residual C impurities against the Si donner concentration of 1.1×1012 cm-2. The lateral HSJ diodes were fabricated using this wafer, and it derived the breakdown voltage of about 600 V for 52 µm drift region length.