[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-27] Breakdown Characteristics of AlGaAs / GaAs / AlGaAs Heterostructure
Diodes with a Pair of Electron and Hole Channels

〇Hiroaki Ogawa¹, Takahiro Obo¹, Shigeyuki Taura¹, Tomoyoshi Kushida^1,2, Naotaka Iwata¹ (1.Toyota Tech. Inst., 2.Toyota Motor Corp.)

Keywords:GaAs, heterostructure diode, superjunction

We previously reported current modulation characteristics of AlGaAs/GaAs/AlGaAs HSJ (heterostructure superjunction) transistor with a pair of electron and hole channels. For high breakdown voltage, it is necessary to match an acceptor concentration with a donner concentration to form channels. In this study, the C acceptor concentration was designed to be 0.7×10¹² cm^-2 considering residual C impurities against the Si donner concentration of 1.1×10¹² cm^-2. The lateral HSJ diodes were fabricated using this wafer, and it derived the breakdown voltage of about 600 V for 52 µm drift region length.