[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

▲ [11p-PB3-3] Study on HCl-based Wet Chemical Cleaning of Epitaxial GaN(0001) Surfaces

〇(M2)Yue Xu¹, Akio Ohta¹, Noriyuki Taoka², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Tetsuo Narita³, Daigo Kikuta³, Koji Shiozaki¹, Tetsu Kachi¹, Seiichi Miyazaki¹ (1.Nagoya Univ, 2.AIST GaN-OIL, 3.Toyota Central R&D Labs)

Keywords:wet chemical cleaning, GaN