Oral presentation

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 9:30 AM - 12:30 PM M121 (H121)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

[9a-M121-1] Transient photo-assisted capacitance characterization of deep states at insulator/wide-bandgap semiconductor interface

〇Atsushi Hiraiwa^1,2, Satoshi Okubo³, Kiyotaka Horikawa³, Hiroshi Kawarada^1,2,3,4 (1.RONLI, Waseda Univ., 2.IMaSS, Nagoya Univ., 3.FSE, Waseda Univ., 4.KMLMST, Waseda Univ.)

9:45 AM - 10:00 AM

[9a-M121-2] Photoemission Study of HfSiO_x/GaN Structure

〇Akio Ohta¹, Makihara Katunori¹, Toshihide Nabatame², Koji Shiozaki¹, Seiichi Miyazaki¹ (1.Nagoya Univ., 2.NIMS.)

10:00 AM - 10:15 AM

[9a-M121-3] Effects of GaN Surface on Fixed Charge in SiO₂/GaN Interface

〇Mutsunori Uenuma¹, Ryota Ando¹, Masaaki Furukawa¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

10:15 AM - 10:30 AM

[9a-M121-4] Impact of Forming Gas Annealing on Electrical Properties of SiO₂/GaN MOS Devices

〇Takahiro Yamada¹, Yuhei Wada¹, Daiki Terashima¹, Mikito Nozaki¹, Katsunori Ueno², Shinya Takashima², Hisashi Yamada³, Tokio Takahashi³, Mitsuaki Shimizu³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Fuji Electric, 3.AIST)

10:30 AM - 10:45 AM

[9a-M121-5] Electron mobility in a channel formed at an Al₂O₃/GaN interface

〇Noriyuki Taoka¹, Trung Nguyen Huu¹, Hisashi Yamada¹, Tokio Takahashi¹, Mitsuaki Shimizu^1,2 (1.AIST-NU GaN-OIL, 2.IMaSS)

10:45 AM - 11:00 AM

△ [9a-M121-6] Theoretical prediction of disappearance of Ga₂O₃layer at the n-GaN/Al₂O₃interfaces

〇(D)Kenta Chokawa¹, Kenji Shiraishi^2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

11:15 AM - 11:30 AM

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al₂O₃/GaN MOS Diodes Due to Gamma-Ray Irradiation

〇(M1)Keito Aoshima¹, Shota Kaneki², Masahiro Horita^1,3, Jun Suda^1,3, Tamotsu Hashizume² (1.Nagoya Univ., 2.RCIQE, Hokkaido Univ., 3.IMaSS, Nagoya Univ.)

11:30 AM - 11:45 AM

△ [9a-M121-8] Improved insulator/semiconductor interfaces in Al₂O₃/AlGaN/GaN structures by AlGaN layer regrowth

〇(M1C)Shinsaku Kawabata¹, Joel Asubar¹, Hirokuni Tokuda¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Fukui Univ)

11:45 AM - 12:00 PM

[9a-M121-9] Temperature Coefficients of Schottky Barrier Heights of Homoepitaxial n-type GaN for Various Schottky Metals

〇Ryosuke Murase¹, Takuya Maeda², Kazutaka Kanegae², Masahiro Horita^1,2,3, Jun Suda^1,2,3 (1.Nagoya Univ., 2.Kyoto Univ., 3.IMaSS Nagoya Univ.)

12:00 PM - 12:15 PM

△ [9a-M121-10] Identification of a compensating acceptor in quartz-free-HVPE grown n-type GaN layers

〇Kazutaka Kanegae¹, Hajime Fujikura², Yohei Otoki², Taichiro Konno², Takehiro Yoshida², Masahiro Horita^1,3,4, Tsunenobu Kimoto¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.SCIOCS Co., Ltd., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

12:15 PM - 12:30 PM

[9a-M121-11] Measurement accuracy of net donor concentration of low-doped n-type GaN by C-V analysis of lateral Schottky diode structure

〇(B)Shohei Rokuno¹, Keisuke Sakao², Masahiro Horita^2,3, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate School, 3.IMaSS, Nagoya Univ.)

Oral presentation

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Kozo Makiyama(Fujitsu Lab.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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2:00 PM - 2:15 PM

[9p-M121-1] Uniform Avalanche Breakdown and Parallel-Plane Breakdown Fields in
GaN-on-GaN PN Diodes with Double-Side-Depleted Shallow Bevel Termination

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

2:15 PM - 2:30 PM

[9p-M121-2] Estimation of Impact Ionization Coefficients in GaN by
Photomultiplication Measurements Utilizing Franz-Keldysh Effect

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ,, 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ,)

2:30 PM - 2:45 PM

[9p-M121-3] High Breakdown Capability of GaN p-n Diodes with Two-Step Mesa Structure

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)

2:45 PM - 3:00 PM

[9p-M121-4] Vertical GaN p-n Diodes Fabricated on Stripe ELO GaN Substrates

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)

3:00 PM - 3:15 PM

[9p-M121-5] Fabrication of fully vertical GaN MOSFET on Si using regrowth

〇Naoki Torii¹, Debaleen Biswas¹, Yamamoto Keiji¹, Egawa Takashi¹ (1.Nagoya Inst.)

3:15 PM - 3:30 PM

[9p-M121-6] Hall measurement of GaN-MOSFETs

〇Katsunori Ueno¹, Hiedeaki Matsuyama¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Masahiro Horita², Jun Suda², Kiyokazu Nakagawa³ (1.Fuji Electric.co, 2.Nagoya Univ., 3.Univ. of Yamanashi)

3:30 PM - 3:45 PM

[9p-M121-7] Control of MOS channel characteristics of GaN-DIMOSFET by Mg implantation dose

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

4:00 PM - 4:15 PM

[9p-M121-8] Fully ion implanted normally-off GaN DMOSFETs

〇Michitaka Yoshino¹, Yuto Ando², Manato Deki³, Toru Toyabe⁴, Kazuo Kuriyama¹, Yoshio Honda³, Tomoaki Nishimura¹, Hiroshi Amano^2,3, Tetsu Kachi³, Tohru Nakamura^1,3 (1.Hosei Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS, 4.Toyo Univ.)

4:15 PM - 4:30 PM

△ [9p-M121-9] The effect of interface state on channel mobilty in GaN lateral MISFET

〇Yuto Ando¹, Tohru Nakamura², Manato Deki², Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Hirotaka Watanabe², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ.)

4:30 PM - 4:45 PM

△ [9p-M121-10] Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate

〇(M1C)Takashi Nishitani¹, Ryota Yamaguchi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

4:45 PM - 5:00 PM

△ [9p-M121-11] Relationship between High Frequency Power Characteristics and Current Collapse of AlGaN/GaN HEMTs

〇(M1C)Takashi Ozawa¹, Joel Asubar¹, Hirokuni Tokuda¹, Yohei Yagishita², Yoichi Kawano², Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Fujitsu Labs.)

5:00 PM - 5:15 PM

△ [9p-M121-12] Characterization of Al₂O₃/AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

〇Shota Kaneki¹, Yuji Ando¹, Tamotsu Hashizume¹ (1.RCIQE, Hokkaido Univ.)

5:15 PM - 5:30 PM

[9p-M121-13] N-polar GaN HEMT with Al₂O₃ gate insulator

〇Akihiro Hayasaka¹, Ryosuke Aonuma¹, Koushi Hotta¹, Isao Makabe², Shigeki Yoshida², Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)

5:30 PM - 5:45 PM

[9p-M121-14] Study on effect of buffer trap to transient response and drain leakage of GaN HEMTs by TCAD

〇Toshiyuki Oishi¹ (1.Saga Univ.)

Oral presentation

[10a-M121-1~10] 13.7 Compound and power electron devices and process technology

Sun. Mar 10, 2019 9:00 AM - 11:45 AM M121 (H121)

Kenji Shiojima(Univ. of Fukui)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[10a-M121-1] Observation of a pn junction of Gallium Nitride with Kelvin Probe Force Microscopy

〇(PC)Tomonori Nakakamura¹, Nobuyuki Ishida¹, Keisuke Sagisaka¹ (1.NIMS)

9:15 AM - 9:30 AM

[10a-M121-2] Threading dislocation density dependence of GaN p-n diodes with deeply etched mesa structure

〇Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Hayata Fukushima¹, Yuto Ando¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

9:30 AM - 9:45 AM

△ [10a-M121-3] Proposal of Two-Dimensional Electric Field Mapping Method for GaN by Sub-Bandgap-Wavelength Light

〇Seiya Kawasaki¹, Hayata Fukushima², Shigeyoshi Usami², Yuto Ando², Atsushi Tanaka^3,4, Manato Deki³, Maki Kushimoto², Shugo Nitta³, Yoshio Honda³, Hiroshi Amano^3,4,5,6 (1.Nagoya Univ., 2.Dept. of Electronics, Nagoya Univ., 3.IMaSS, 4.NIMS, 5.Akasaki RC, 6.VBL)

9:45 AM - 10:00 AM

△ [10a-M121-4] Evaluation of Temperature-Dependent Stress in GaN HEMT by Raman Spectroscopy

〇Tomoyuki Uchida¹, Ryuichi Sugie¹ (1.Toray Research Center)

10:00 AM - 10:15 AM

[10a-M121-5] Electrical properties of selectively grown GaN channels for FinFETs

〇Takuya Hamada¹, Hayato Mukai¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Iwai Hiroshi¹, Tsutsui Kazuo¹ (1.Tokyo Tech, 2.AIST)

10:30 AM - 10:45 AM

[10a-M121-6] Simple electrodeless photoelectrochemical (PEC) etching for the vertical GaN devices

〇FUMIMASA HORIKIRI¹, NOBORU FUKUHARA¹, HIROSHI OHTA², NAOMI ASAI², YOSHINOBU NARITA¹, TAKEHIRO YOSHIDA¹, TOMOYOSHI MISHIMA², MASACHIKA TOGUCHI³, KAZUKI MIWA³, TAKETOMO SATO³ (1.SCIOCS, 2.Hosei Univ., 3.Hokkaido Univ.)

10:45 AM - 11:00 AM

[10a-M121-7] Electrochemical properties on GaN electrode in S₂O₈^2- contaning electrolytes

〇Masachika Toguchi¹, Kazuki Miwa¹, Fumimasa Horikiri², Noboru Fukuhara², Yoshinobu Narita², Takehiro Yoshida², Taketomo Sato¹ (1.RCIQE, Hokkaido Univ., 2.SCIOCS Co. Ltd.)

11:00 AM - 11:15 AM

[10a-M121-8] Photo-electrochemical (PEC) etching on AlGaInN/AlGaN heterostructures

〇Yuto Komatsu¹, Keisuke Uemura¹, Daiki Hosomi², Makoto Miyoshi², Taketomo Sato¹ (1.RCIQE,Hokkaido Univ., 2.Nagoya Inst. of Tech.)

11:15 AM - 11:30 AM

[10a-M121-9] Gallium Nitride Atomic Layer Etching by Chlorine Neutral Beam

〇KENTA SUGAWARA¹, (P)DAISUKE OHORI², KAZUTAKA INOUE¹, SEIJI SAMUKAWA^2,3 (1.Sumitomo Electric, 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ.)

11:30 AM - 11:45 AM

△ [10a-M121-10] A study of the effect of selective thermal decomposition under NH₃/H₂ mixed atmosphere on electric properties of GaN HEMT

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

Oral presentation

[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 9:00 AM - 12:15 PM M121 (H121)

Masashi Kato(NITech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-M121-1] Mg recoil implantation into GaN with Nitrogen ions (3)

〇Toshikazu Yamada¹, Hisashi Yamada¹, Hiroshi Chonan¹, Noriyuki Taoka¹, Tokio Takahashi¹, Mituaki Shimizu^1,2 (1.AIST, 2.Nagoya Univ.)

9:15 AM - 9:30 AM

[11a-M121-2] Pulsed-laser Activation of Implanted Mg Acceptors in GaN Grown on GaN Substrates

〇Takao Miyajima¹, Yusuke Yamada¹, Takato Ichikawa¹, Daichi Imai¹, Toshiyuki Sameshima² (1.Meijo Univ., 2.Tokyo Univ. of Agric. & Tech.)

9:30 AM - 9:45 AM

[11a-M121-3] Post Atmospheric Pressure Thermal-Plasma-Jet Irradiation annealing of Magnesium implanted in Ga-face GaN layer

〇Hiroaki Hanafusa¹, Seiichiro Higashi¹, Koji Shiozaki² (1.HIroshima Univ., 2.Nagoya Univ.)

9:45 AM - 10:00 AM

[11a-M121-4] Photoluminescence studies on various Mg ion-implanted GaN

〇Shigefusa Chichibu^1,2,3, Kohei Shima¹, Hiroko Iguchi⁴, Tetsuo Narita⁴, Keita Kataoka⁴, Kazunobu Kojima¹, Akira Uedono⁵ (1.Tohoku Univ., 2.Nagoya Univ., 3.Hokkaido Univ., 4.Toyota Central RDL, 5.Univ. of Tsukuba)

10:00 AM - 10:15 AM

[11a-M121-5] Deep levels introduced by 2-MeV electron beam irradiation in homoepitaxial n-type GaN

〇Masahiro Horita^1,2, Tetsuo Narita³, Tetsu Kachi², Tsutomu Uesugi³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Toyota Central R&D Labs., Inc.)

10:15 AM - 10:30 AM

[11a-M121-6] Low temperature behavior of deep level traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Meguru Endo¹, Masahiro Horita^2,3, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate School, 3.IMaSS Nagoya Univ.)

10:45 AM - 11:00 AM

[11a-M121-7] Resolution of H1 spectra in MOVPE n-GaN by optical DLTS

〇(M1)Syun Ito¹, Yutaka Tokuda¹ (1.Aichi Inst. of Technol)

11:00 AM - 11:15 AM

[11a-M121-8] Characterization of hole traps in hydrogen-implanted n-GaN

〇(M1)Kazuya Tamura¹, Ken Iyoda¹, Yutaka Tokuda¹, Kenji Shiojima², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Technol., 2.Fukui Univ., 3.S.H. I-ATEX Co, Ltd)

11:15 AM - 11:30 AM

[11a-M121-9] Deep level traps in GaN by high-temperature thermal treatment with SiN cap

〇Satomu Furuta¹, Masahiro Horita^2,3, Nariaki Tanaka⁴, Tohru Oka⁴, Jun Suda^2,3 (1.Nagoya Univ., 2.Nagoya Univ. Graduate school, 3.IMASS Nagoya Univ., 4.Toyota Gosei)

11:30 AM - 11:45 AM

[11a-M121-10] Band-diagram estimation on InGaAs/a-Ge/InGaAs material systems fabricated by atomic-diffusion bonding

〇yuki yamada¹, Miyuki Uomoto², Takehito Shimatsu², Masahiro Nada³, Fumito Nakajima¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs., 2.Tohoku Univ., 3.NTT Device Innovation Center)

11:45 AM - 12:00 PM

[11a-M121-11] Evaluation of fabrication method of InGaAs Nanosheet used by HSQ

〇(M1)Minoru Kitamura¹, Toru Kanazawa¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech.)

12:00 PM - 12:15 PM

[11a-M121-12] Elemental distribution analysis around GaAs/GaAs homointerfaces fabricated by surface-activated bonding method

〇Yasuo Shimizu¹, Naoki Ebisawa¹, Yutaka Ohno¹, Jianbo Liang², Naoteru Shigekawa², Koji Inoue¹, Yasuyoshi Nagai¹ (1.IMR Tohoku Univ., 2.Osaka City Univ.)

Poster presentation

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

▼ [11p-PB3-1] Trapping reduction of SiO₂/GaN MOS structure by high pressure water vapor annealing

〇(DC)LIN TENGDA¹, Mutsunori Uenuma¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology)

1:30 PM - 3:30 PM

[11p-PB3-2] GaN on GaN surface morphology after low bias etching

〇Kota Uzaki¹, Satoko Shinkai¹ (1.Kyutech.)

1:30 PM - 3:30 PM

▲ [11p-PB3-3] Study on HCl-based Wet Chemical Cleaning of Epitaxial GaN(0001) Surfaces

〇(M2)Yue Xu¹, Akio Ohta¹, Noriyuki Taoka², Mitsuhisa Ikeda¹, Katsunori Makihara¹, Tetsuo Narita³, Daigo Kikuta³, Koji Shiozaki¹, Tetsu Kachi¹, Seiichi Miyazaki¹ (1.Nagoya Univ, 2.AIST GaN-OIL, 3.Toyota Central R&D Labs)

1:30 PM - 3:30 PM

[11p-PB3-4] Study on Microfabrication of GaN by Photo-Electrochemical Etching

〇Michihito Shimauchi^1,2, Kazuki Miwa¹, Masachika Toguchi¹, Taketomo Sato¹, Junichi Motohisa^1,2 (1.RCIQE,Hokkaido Univ., 2.IST,Hokkaido Univ)

1:30 PM - 3:30 PM

[11p-PB3-5] Mapping of photo-electrochemical etched Ni/n-GaN Schottky contacts
using scanning internal photoemission microscopy

〇Ryo Matsuda¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Fukui Univ., 2.SCIOCS, 3.Hosei Univ.)

1:30 PM - 3:30 PM

[11p-PB3-6] Control of plasma-induced damage of n-type GaN treated by slope-down-bias ICP-RIE

〇Shinji Yamada^1,2,3, Hideki Sakurai^1,2,3, Masato Omori¹, Toshiyuki Nakamura³, Ryuichiro Kamimura³, Jun Suda^1,2, Tetsu Kachi¹ (1.Nagoya Univ. IMaSS, 2.Nagoya Univ., 3.ULVAC ISET)

1:30 PM - 3:30 PM

[11p-PB3-7] Impact of Surface Treatment on GaN-on-GaN Schottky Barrier Diode

〇(M1)Kazuki Isobe¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

1:30 PM - 3:30 PM

[11p-PB3-8] Recovery Process of Characteristic Change of p-GaN/AlGaN/GaN HEMTs Induced by Gamma-ray Irradiation

〇Koki Tsurimoto¹, Hasahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

1:30 PM - 3:30 PM

[11p-PB3-9] GaN-channel HEMT with Al_0.05Ga_0.95N back barrier on high-resistivity Si substrate

〇Takuya Hoshi¹, Sugiyama Hiroki¹, Nakajima Fumito¹, Matsuzaki Hideaki¹ (1.NTT Device Technology Labs, NTT Corporation)

1:30 PM - 3:30 PM

[11p-PB3-10] Characteristics of AlGaN/GaN high electron mobility transisors with various p-type GaN gate structures fomed by dry etching

〇Takaaki Kondou¹, Yoshihiko Akazawa¹, Naotaka Iwata¹ (1.Toyota Tech. Inst.)

1:30 PM - 3:30 PM

[11p-PB3-11] Effects of forming gas annealing on electrical properties of Pt/ALD-Al₂O₃/AlGaN/GaN MIS-HEMTs

〇(M1)Keita Furuoka¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.Nagoya Inst. of Tech.)

1:30 PM - 3:30 PM

[11p-PB3-12] Study on MIS interface states of ALD-Al₂O₃/AlGaInN/AlGaN heterostructures

〇(B)Saki Saito¹, Daiki Hosomi¹, Keita Furuoka¹, Toshiharu Kubo¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

1:30 PM - 3:30 PM

△ [11p-PB3-13] DC characteristics of AlGaN/GaN vertical trench MOS-HEMTs: Effects of Mg doping

〇(M2)Keito Kanatani¹, Naofumi Yoneda¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

1:30 PM - 3:30 PM

[11p-PB3-14] Evaluation of Carrier Concentration for p-GaN Epitaxial Layers by Schottky Barrier Characteristics

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryo Tanaka¹, Yuta Fukushima¹, Masaharu Edo¹ (1.Fuji Electric)

1:30 PM - 3:30 PM

[11p-PB3-15] Impact of Dosage on Electrical Properties of Mg-Ion-Implanted GaN before High-Temperature Annealing (2)

〇(M1)Ryo Kamoshida¹, Kei Uetake¹, Shunta Murai¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

1:30 PM - 3:30 PM

[11p-PB3-16] Evaluation of lightly-implanted Mg and co-implantation into p-GaN epi layers by capacitance measurement

〇Shinya Takashima¹, Katsunori Ueno¹, Ryo Tanaka¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kohei Shima², Kazunobu Kojima², Shigefusa F. Chichibu^2,3, Akira Uedono⁴ (1.Fuji Electric, 2.Tohoku Univ., 3.Nagoya Univ. IMass, 4.Tsukuba Univ.)

1:30 PM - 3:30 PM

[11p-PB3-17] Characterization of shallow levels in p-GaN grown by MOVPE on GaN

〇(B)Hikaru Yoshida¹, Tatsuya Kogiso¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

1:30 PM - 3:30 PM

[11p-PB3-18] Simulation Study on Electric Field in GaN PN Diodes with Beveled-Mesa Structure

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunonobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

1:30 PM - 3:30 PM

[11p-PB3-19] Nitride semiconductor device application of silicon dioxide by chemical vapor deposition enhanced by atomic oxygen at the ground level

〇Makoto Baba¹, Yuto Kakiuchi¹, Hiroshi Okada¹, Masakazu Furukawa², Keisuke Yamane¹, Hiroto Sekiguchi¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

1:30 PM - 3:30 PM

[11p-PB3-20] Study of Insulated Gate GaN-based Transistor using Chemical Vapor Deposition Method Enhanced by Atmic Oxygen at the ground level

〇Kento Nakamura¹, Makoto Baba¹, Hiroshi Okada¹, Masakazu Furukawa², Hiroto Sekiguchi¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

1:30 PM - 3:30 PM

[11p-PB3-21] Estimation of parasitic circuit elements by measuring radiated emission from GaN switching circuit

〇Toshihide Ide^1,2, Mikio Oomori², Mitsuaki Shimizu¹, Noriyuki Takada² (1.NU-AIST GaN-OIL, 2.AIST ESPRIT)

1:30 PM - 3:30 PM

[11p-PB3-22] Turn-On Capacitance Recovery Characteristics of AlGaN/GaN/GaN:C Hetero-Structures Grown on 3C-SiC/Si Substrates

〇Yoshitaka Nakano¹, Koichi Kitahara², Sumito Ouchi², Mitsuhisa Narukawa², Keisuke Kawamura² (1.Chubu Univ., 2.Air Water Inc.)

1:30 PM - 3:30 PM

[11p-PB3-23] Analysis of SiC/Si bonding interface with thermal annealing treatment by XPS

〇Zexin Wan¹, Jianbo Liang¹, Naoteru Shigekawa¹ (1.Osaka City Univ.)

1:30 PM - 3:30 PM

[11p-PB3-24] Evaluation of single crystal β-Ga₂O₃ surface roughness by dry etching

〇(B)Yuuki Moriyama¹, Kota Uzaki¹, Satoko Shinkai² (1.Kyuukou Univ, 2.Kyuukou Micro)

1:30 PM - 3:30 PM

[11p-PB3-25] Fabrication of GaAs/Diamond direct bonding for high power device applications

〇Yuji Nakamura¹, Satoshi Masuya², Makoto Kasu², Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka City Univ., 2.Saga Univ.)

1:30 PM - 3:30 PM

[11p-PB3-26] Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction field effect transistor by a second light illumination

〇Takuya Kawazu¹, Takeshi Noda¹, Yoshiki Sakuma¹ (1.NIMS)

1:30 PM - 3:30 PM

[11p-PB3-27] Breakdown Characteristics of AlGaAs / GaAs / AlGaAs Heterostructure
Diodes with a Pair of Electron and Hole Channels

〇Hiroaki Ogawa¹, Takahiro Obo¹, Shigeyuki Taura¹, Tomoyoshi Kushida^1,2, Naotaka Iwata¹ (1.Toyota Tech. Inst., 2.Toyota Motor Corp.)

Oral presentation

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

Tue. Mar 12, 2019 9:00 AM - 11:30 AM M121 (H121)

Keita Konishi(Tokyo Univ. of Agri. and Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[12a-M121-1] Vertical Ga₂O₃ Schottky Barrier Diodes with a Guard Ring Fabricated by Using Nitrogen-Ion Implantation (II)

〇Chiahung Lin¹, Yohei Yuda², Man Hoi Wong¹, Mayuko Sato³, Nao Takekawa³, Keita Konishi³, Tatsuro Watahiki², Mikio Yamamuka², Hisashi Murakami³, Yoshinao Kumagai³, Masataka Higashiwaki¹ (1.NICT, 2.Mitsubishi Electric Corp., 3.Tokyo Univ. of Agri. & Tech.)

9:15 AM - 9:30 AM

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga₂O₃ MOSFETs with Nitrogen-Doped Current Blocker

〇ManHoi Wong¹, Ken Goto^2,3, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. Agricul. Technol., 3.Tamura Corp.)

9:30 AM - 9:45 AM

▲ [12a-M121-3] β-Ga₂O₃ MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

〇ManHoi Wong¹, Ken Goto^2,3, Hisashi Murakami², Yoshinao Kumagai², Masataka Higashiwaki¹ (1.NICT, 2.Tokyo Univ. Agricul. Technol., 3.Tamura Corp.)

9:45 AM - 10:00 AM

[12a-M121-4] Normally-Off β-Ga₂O₃ MOSFET with Nitrogen-Doped Channel

〇Takafumi Kamimura¹, Yoshiaki Nakata¹, Man Hoi Wong¹, Hong Phuc Than¹, Masataka Higashiwaki¹ (1.NICT)

10:00 AM - 10:15 AM

▲ [12a-M121-5] Reduction of the density of defects at the SiO₂/Ga₂O₃ MOS interface by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing

〇QIN MAO¹, Eiki Suzuki¹, Atsushi Tamura¹, Koji Kita¹ (1.The Univ. of Tokyo)

10:30 AM - 10:45 AM

[12a-M121-6] Switching Characteristics of PFC circuit using β-Ga₂O₃ Schottky Barrier Diodes

〇Jun Arima¹, Jun Hirabayashi¹, Minoru Fujita¹, Daisuke Inokuchi¹, Kohei Sasaki², Akito Kuramata², Shigenobu Yamakoshi³, Yoshiaki Fukumitsu¹ (1.TDK Corp, 2.Novel Crystal Tech, 3.Tamura Corp)

10:45 AM - 11:00 AM

[12a-M121-7] Small-signal RF characteristics for submicron-gate MOSFETs fabricated on hetero-epitaxial diamond substrate

Yuma Ishimatsu¹, Toshiyuki Oishi¹, Takuya Kamogawa¹, Saha Niloy Chandra¹, Seong-Woo Kim², 〇Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

11:00 AM - 11:15 AM

[12a-M121-8] Formation of Diamond/Cu direct bonding for power device application

〇Jianbo Liang¹, Shinji Kanda¹, Satoshi Masuya², Makoto Kasu², Naoteru Shigekawa¹ (1.Osaka City Univ., 2.Saga Univ.)

11:15 AM - 11:30 AM

[12a-M121-9] Application of 50kW-Crass Super-High Power Transistor to EV Control

〇Kensho Okamoto¹, Masami Hosokawa², Fumio Matsushita², Itsuo Nakano³ (1.Kagawa Univ., 2.Optosemicon. Labo., 3.Okayama Univ.)

Sessions

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[9a-M121-1~11] 13.7 Compound and power electron devices and process technology

△ [9a-M121-6] Theoretical prediction of disappearance of Ga2O3layer at the n-GaN/Al2O3interfaces

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al2O3/GaN MOS Diodes Due to Gamma-Ray Irradiation

△ [9a-M121-8] Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth

△ [9a-M121-10] Identification of a compensating acceptor in quartz-free-HVPE grown n-type GaN layers

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

△ [9p-M121-9] The effect of interface state on channel mobilty in GaN lateral MISFET

△ [9p-M121-10] Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate

△ [9p-M121-11] Relationship between High Frequency Power Characteristics and Current Collapse of AlGaN/GaN HEMTs

△ [9p-M121-12] Characterization of Al2O3/AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

[10a-M121-1~10] 13.7 Compound and power electron devices and process technology

△ [10a-M121-3] Proposal of Two-Dimensional Electric Field Mapping Method for GaN by Sub-Bandgap-Wavelength Light

△ [10a-M121-4] Evaluation of Temperature-Dependent Stress in GaN HEMT by Raman Spectroscopy

△ [10a-M121-10] A study of the effect of selective thermal decomposition under NH3/H2 mixed atmosphere on electric properties of GaN HEMT

[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

▼ [11p-PB3-1] Trapping reduction of SiO2/GaN MOS structure by high pressure water vapor annealing

▲ [11p-PB3-3] Study on HCl-based Wet Chemical Cleaning of Epitaxial GaN(0001) Surfaces

△ [11p-PB3-13] DC characteristics of AlGaN/GaN vertical trench MOS-HEMTs: Effects of Mg doping

[12a-M121-1~9] 13.7 Compound and power electron devices and process technology

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga2O3 MOSFETs with Nitrogen-Doped Current Blocker

▲ [12a-M121-3] β-Ga2O3 MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

▲ [12a-M121-5] Reduction of the density of defects at the SiO2/Ga2O3 MOS interface by the combination of high-temperature O2 annealing and low-temperature H2 annealing

Authentication

△ [9a-M121-6] Theoretical prediction of disappearance of Ga₂O₃layer at the n-GaN/Al₂O₃interfaces

△ [9a-M121-7] Changes in Capacitance-Voltage Characteristics of Al₂O₃/GaN MOS Diodes Due to Gamma-Ray Irradiation

△ [9a-M121-8] Improved insulator/semiconductor interfaces in Al₂O₃/AlGaN/GaN structures by AlGaN layer regrowth

△ [9p-M121-12] Characterization of Al₂O₃/AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

△ [10a-M121-10] A study of the effect of selective thermal decomposition under NH₃/H₂ mixed atmosphere on electric properties of GaN HEMT

▼ [11p-PB3-1] Trapping reduction of SiO₂/GaN MOS structure by high pressure water vapor annealing

▲ [12a-M121-2] Vertical Triple-Ion-Implanted β-Ga₂O₃ MOSFETs with Nitrogen-Doped Current Blocker

▲ [12a-M121-3] β-Ga₂O₃ MOSFETs with Nitrogen-Ion-Implanted Back-Barrier

▲ [12a-M121-5] Reduction of the density of defects at the SiO₂/Ga₂O₃ MOS interface by the combination of high-temperature O₂ annealing and low-temperature H₂ annealing