Toshiyuki Oishi

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

5:30 PM - 5:45 PM

[9p-M121-14] Study on effect of buffer trap to transient response and drain leakage of GaN HEMTs by TCAD

〇Toshiyuki Oishi¹ (1.Saga Univ.)