Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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2:00 PM - 2:15 PM

[9p-M121-1] Uniform Avalanche Breakdown and Parallel-Plane Breakdown Fields in
GaN-on-GaN PN Diodes with Double-Side-Depleted Shallow Bevel Termination

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

2:15 PM - 2:30 PM

[9p-M121-2] Estimation of Impact Ionization Coefficients in GaN by
Photomultiplication Measurements Utilizing Franz-Keldysh Effect

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ,, 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ,)

2:30 PM - 2:45 PM

[9p-M121-3] High Breakdown Capability of GaN p-n Diodes with Two-Step Mesa Structure

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)

2:45 PM - 3:00 PM

[9p-M121-4] Vertical GaN p-n Diodes Fabricated on Stripe ELO GaN Substrates

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)

3:00 PM - 3:15 PM

[9p-M121-5] Fabrication of fully vertical GaN MOSFET on Si using regrowth

〇Naoki Torii¹, Debaleen Biswas¹, Yamamoto Keiji¹, Egawa Takashi¹ (1.Nagoya Inst.)

3:15 PM - 3:30 PM

[9p-M121-6] Hall measurement of GaN-MOSFETs

〇Katsunori Ueno¹, Hiedeaki Matsuyama¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Masahiro Horita², Jun Suda², Kiyokazu Nakagawa³ (1.Fuji Electric.co, 2.Nagoya Univ., 3.Univ. of Yamanashi)

3:30 PM - 3:45 PM

[9p-M121-7] Control of MOS channel characteristics of GaN-DIMOSFET by Mg implantation dose

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

4:00 PM - 4:15 PM

[9p-M121-8] Fully ion implanted normally-off GaN DMOSFETs

〇Michitaka Yoshino¹, Yuto Ando², Manato Deki³, Toru Toyabe⁴, Kazuo Kuriyama¹, Yoshio Honda³, Tomoaki Nishimura¹, Hiroshi Amano^2,3, Tetsu Kachi³, Tohru Nakamura^1,3 (1.Hosei Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS, 4.Toyo Univ.)

4:15 PM - 4:30 PM

△ [9p-M121-9] The effect of interface state on channel mobilty in GaN lateral MISFET

〇Yuto Ando¹, Tohru Nakamura², Manato Deki², Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Hirotaka Watanabe², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ.)

4:30 PM - 4:45 PM

△ [9p-M121-10] Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate

〇(M1C)Takashi Nishitani¹, Ryota Yamaguchi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

4:45 PM - 5:00 PM

△ [9p-M121-11] Relationship between High Frequency Power Characteristics and Current Collapse of AlGaN/GaN HEMTs

〇(M1C)Takashi Ozawa¹, Joel Asubar¹, Hirokuni Tokuda¹, Yohei Yagishita², Yoichi Kawano², Masaaki Kuzuhara¹ (1.Fukui Univ., 2.Fujitsu Labs.)

5:00 PM - 5:15 PM

△ [9p-M121-12] Characterization of Al₂O₃/AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

〇Shota Kaneki¹, Yuji Ando¹, Tamotsu Hashizume¹ (1.RCIQE, Hokkaido Univ.)

5:15 PM - 5:30 PM

[9p-M121-13] N-polar GaN HEMT with Al₂O₃ gate insulator

〇Akihiro Hayasaka¹, Ryosuke Aonuma¹, Koushi Hotta¹, Isao Makabe², Shigeki Yoshida², Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries, Ltd)

5:30 PM - 5:45 PM

[9p-M121-14] Study on effect of buffer trap to transient response and drain leakage of GaN HEMTs by TCAD

〇Toshiyuki Oishi¹ (1.Saga Univ.)

Session information

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

[9p-M121-1] Uniform Avalanche Breakdown and Parallel-Plane Breakdown Fields in
GaN-on-GaN PN Diodes with Double-Side-Depleted Shallow Bevel Termination

[9p-M121-2] Estimation of Impact Ionization Coefficients in GaN by
Photomultiplication Measurements Utilizing Franz-Keldysh Effect

[9p-M121-3] High Breakdown Capability of GaN p-n Diodes with Two-Step Mesa Structure

[9p-M121-4] Vertical GaN p-n Diodes Fabricated on Stripe ELO GaN Substrates

[9p-M121-5] Fabrication of fully vertical GaN MOSFET on Si using regrowth

[9p-M121-6] Hall measurement of GaN-MOSFETs

[9p-M121-7] Control of MOS channel characteristics of GaN-DIMOSFET by Mg implantation dose

[9p-M121-8] Fully ion implanted normally-off GaN DMOSFETs

△ [9p-M121-9] The effect of interface state on channel mobilty in GaN lateral MISFET

△ [9p-M121-10] Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate

△ [9p-M121-11] Relationship between High Frequency Power Characteristics and Current Collapse of AlGaN/GaN HEMTs

△ [9p-M121-12] Characterization of Al₂O₃/AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

[9p-M121-13] N-polar GaN HEMT with Al₂O₃ gate insulator

[9p-M121-14] Study on effect of buffer trap to transient response and drain leakage of GaN HEMTs by TCAD

Authentication

Session information

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

△ [9p-M121-9] The effect of interface state on channel mobilty in GaN lateral MISFET

△ [9p-M121-10] Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate

△ [9p-M121-11] Relationship between High Frequency Power Characteristics and Current Collapse of AlGaN/GaN HEMTs

△ [9p-M121-12] Characterization of Al2O3/AlGaN/GaN HEMTs fabricated on free-standing GaN substrates

Authentication

△ [9p-M121-12] Characterization of Al₂O₃/AlGaN/GaN HEMTs fabricated on free-standing GaN substrates