Yuto Ando

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

4:15 PM - 4:30 PM

△ [9p-M121-9] The effect of interface state on channel mobilty in GaN lateral MISFET

〇Yuto Ando¹, Tohru Nakamura², Manato Deki², Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Hirotaka Watanabe², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ.)

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