Takashi Nishitani

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

4:30 PM - 4:45 PM

△ [9p-M121-10] Characterization of on-state breakdown voltage in AlGaN/GaN MOS-HEMTs with Gate Field Plate

〇(M1C)Takashi Nishitani¹, Ryota Yamaguchi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)