Hiroshi Ohta

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

2:30 PM - 2:45 PM

[9p-M121-3] High Breakdown Capability of GaN p-n Diodes with Two-Step Mesa Structure

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)

2:45 PM - 3:00 PM

[9p-M121-4] Vertical GaN p-n Diodes Fabricated on Stripe ELO GaN Substrates

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)