Ryo Tanaka

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Speaker, Author, Co-Author

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

3:30 PM - 3:45 PM

[9p-M121-7] Control of MOS channel characteristics of GaN-DIMOSFET by Mg implantation dose

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)