[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

[9p-M121-7] Control of MOS channel characteristics of GaN-DIMOSFET by Mg implantation dose

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kiyokazu Nakagawa² (1.Fuji Electric, 2.Univ. of Yamanashi)

Keywords:Gallium Nitride, Ion implantation, MOSFET

We report the Mg dose dependence of MOS channel characteristics of GaN-DIMOSFET fabricated on Mg ion implanted n-GaN epitaxial layers. The Mg implantation energy was 700 keV and the dose was changed in the range of 4.2x10¹³ to 4.2x10¹⁴ cm^-2. The threshold voltage increased and the mobility decreased with the Mg dose increased, so it has been confirmed that the MOS channel characteristics can be controlled by the Mg implantation dose.