Keito Kanatani

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Speaker, Author, Co-Author

Mon. Mar 11, 2019 1:30 PM - 3:30 PM PB3 (PB)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

1:30 PM - 3:30 PM

△ [11p-PB3-13] DC characteristics of AlGaN/GaN vertical trench MOS-HEMTs: Effects of Mg doping

〇(M2)Keito Kanatani¹, Naofumi Yoneda¹, Akio Yamamoto¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)